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| TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55TU-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 2095 Device Dissipation @ 25C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 3.5 Emitter to Base Voltage (BVebo) Collector Current (Ic) 60 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A C C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pg c RL Tr Pd VSWR CHARACTERISTICS Power Out Power Gain Collector Efficiency Return Loss Rise Time Pulse Droop Load Mismatch Tolerance 1 TEST CONDITIONS Pulse Width = 32s Duty Factor = 2% F = 1030 MHz, Vcc = 53 Volts Pin = 115 Watts MIN 1200 10.2 45 -10 TYP MAX UNITS W dB % dB 100 0.7 3.0:1 ns dB FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces hFE jc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance 1. At rated output power and pulse conditions Ie = 40 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 0.02 V V C/W Preliminary - May 2007 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. TCS1200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. |
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